Status : Published (Under review)

This standard was last reviewed and confirmed in 2020. Therefore this version remains current.
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Abstract

ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.

It is not applicable to the surface-transient region where the sputtering rate is not in the steady state.

It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.

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General information

  • Status
     : Published
    Publication date
     : 2009-04
    Stage
    : International Standard confirmed [90.93]
  • Edition
     : 1
    Number of pages
     : 19
  • Technical Committee :
    ISO/TC 201/SC 6
    ICS :
    71.040.40 
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Life cycle

Sustainable Development Goals

This standard contributes to the following Sustainable Development Goals

9
Industry, Innovation and Infrastructure
7
Affordable and Clean Energy

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